TABLE 2A (cont`d): MOSFET/IGBT single device
Date Code
# Part Number or Voltage
Test # [V]
121 IXTQ182N055T SK0612 16
122 IXTQ182N055T SK0612 16
123 IXTQ22N50P SS0633 16
124 IXTQ22N60P SK0604 16
125 IXTQ26N50P SK0604 16
126 IXTQ28N15P SK0653 16
127 IXTQ36P15P SK0652 16
128 IXTQ76N25T SK0613 16
129 IXTQ82N25T SK0514 16
130 IXTQ82N25T SK0603 16
131 IXTQ88N28T SK0641 16
132 IXTQ88N30P SK0605 16
133 IXTQ88N30T SK0638 16
134 IXTQ96N20P SS0631 16
135 IXTQ96N25T SK0648 16
136 IXTT88N30P SP0626 16
137 IXTV18N60PS SP0636 16
138 IXTV230N085TS SP0629 16
Temp.
[°C]
125
150
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
125
Time
[hrs]
1000
500
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
Sample
Size
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
Failures
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Device Hours
[hrs]
30000
15000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
Remark
TABLE 2B: MOSFET/IGBT Module
Date Code
# Part Number or
Test #
1 GWM100-01X1SL 1965
Voltage
[V]
16
Temp.
[°C]
150
Time
[hrs]
168
Sample
Size
10
Failures
0
Device Hours
[hrs]
1680
Remark
2
GWM120-0075P3SL
1720
16
150
1000
80
0
80000
3 MDI300-12A4 1555
4 MDI75-12 1931
16
16
125
125
126
168
10
10
0
0
1260
1680
5
MIAA20WD600TMH
1844
16
125
1000
10
0
10000
6 MII300-12A4 2012
7 MII400-12E4 1741
8 MII75-12A3 1541
16
16
16
125
125
125
168
168
168
10
10
10
0
0
0
1680
1680
1680
9
10
MIXA15WB1200TED
MIXA35WB1200TED
1992
1991
16
16
125
125
1000
1000
5
5
0
0
5000
5000
11 MUBW15-12A6K 1553
12 MUBW50-12E8 1469
13 MWI30-06A7T 1635
14 MWI30-06A7T 2069
15 VII130-06P1 2025
16
16
16
16
16
125
125
125
125
125
168
168
168
168
168
10
10
10
10
10
0
0
0
0
0
1680
1680
1680
1680
1680
TABLE 2C: ISOPLUS
Date Code
#
Part Number
or
Voltage
Temp.
Time
Sample
Failures
Device Hours
Remark
Test #
[V]
[°C]
[hrs]
Size
[hrs]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
GWM100-01X1SL
GWM120-0075P3SL
IXER35N120D1
IXER35N120D1
IXFL100N50P
IXFL60N80P
IXFL82N60P
IXFR12N100Q
IXFR14N100Q2
IXFR26N100P
IXGR120N60C2
IXGR40N60C2D1
IXGR48N60C3D1
IXTC110N25T
IXTC200N075T
1965
1720
1950
1950
SP0549
SP0605
SP0550
TP0703
SP0732
TJ1159E
SP0722
SP0635
SP0722
SP0721
SP0627
16
16
16
16
16
16
16
16
16
16
16
16
16
16
16
150
150
150
150
125
125
125
125
125
125
125
125
125
125
125
168
1000
168
168
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
10
80
20
20
30
30
30
30
30
30
30
30
30
30
30
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1680
80000
3360
3360
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
30000
IXYS Semiconductor GmbH
13
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相关代理商/技术参数
IXTQ30N50L 功能描述:MOSFET 30 Amps 500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ30N50L2 功能描述:MOSFET LINEAR L2 SERIES MOSFET 500V 30A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ30N50P 功能描述:MOSFET 30.0 Amps 500 V 0.2 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ30N60L2 功能描述:MOSFET 30 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ30N60P 功能描述:MOSFET 30.0 Amps 600 V 0.24 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ36N20T 功能描述:MOSFET 36 Amps 200V 60 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ36N30P 功能描述:MOSFET 36 Amps 300V 0.11 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ36N50P 功能描述:MOSFET 36.0 Amps 500 V 0.17 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube